所屬科目：中山◆電機◆半導體概論
1. The electron and the hole concentrations in a silicon sample are shown below. The cross-sectional area of the sample is 2x104 μm2. Determine the total diffusion current versus distance x for 0≤x≤0.005cm. (10%)
4. Answer the following questions about MOS capacitor. (a) Explain the flat-band voltage. (5%)( b) Consider a n+polysilicon-SiO2-Si capacitor with a p-type silicon substrate doped to NA = cm, a silicon dioxide insulator with a thickness of 300 . The metal-semiconductor work function diference is -0.98 V. The fixed charge within the SiO2-Si interface Q/q = 4✖The dielectric constant of SiO2 is 3.9. Calculate the flat-band voltage. (15%)
5. For DRAM operation, assume that we need a minimum of 105 electrons for the MOS storage capacitor. The capacitor has an area of 0.6 μmx 0.6 um on the wafer, an oxide thickness of 7 nm, and is fully charged to 3 V. What is the required minimum depth of a rectangular-trench capacitor?
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(10%)
cm, a silicon dioxide insulator with a thickness of 300 
. The metal-semiconductor work function diference is -0.98 V. The fixed charge within the SiO2-Si interface Q/q = 4✖
The dielectric constant of SiO2 is 3.9. Calculate the flat-band voltage. (15%)