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110年 - 110 國立臺灣科技大學_碩士班招生試題_材料科學與工程系(丙組)：材料導論#105562
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5. (Total:20%)
(2) Use MgO as an example material to draw the corresponding images for Frenkel defect and Schottky defect (10%)
相關申論題
(1) Draw the a0-T plot (lattice constant vs. tempcrature) for the γphase between T1 and T4, assuming that the thermal expansion coefficient of γis 0/℃. (5%)
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(2) Calculate the weight fraction of the γ phase at T4 (ust above 727℃). (5%)
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(3) Draw the microstructure for the carbon-steel alloy at T4 and T5 and indicate all the phases present in the drawings.(5%)
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(4) Describe the differences between the words eutectic and eutectoid. (5%)
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(1) Draw the concentration profile C(x) for the Constant Surface Concentration Diffusion at an arbitrary time t1. Compare the diffusion fluxes at positions x1 and x2 where x1 ＜x2. (5%)
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(2)Compare the mechanisms and activation energies for the carbon diffus iron and the nickel diffusion in fcc iron. (5%)
#449067
(1) Compare the velocity of light in air and in a piece of glass. Also compare the sound velocity in air and in glass. (5%)
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(2) The refractive index of cubic zirconia is 2.1. Calculate the critical angle for Total Internal Reflection of cubic zirconia in air. Also calculate the reflectivity of cubic zirconia in air. (5%)
#449069
(1) Draw the band diagram for an n-type semiconductor and indicate energy levels in the drawing. (5%)
#449070
(2) Draw the In σ -1/T plot for an n-type semiconductor over a wide range of temperature, where the o is electrical conductivity. Correlate the slopes in the drawing with the band gap or energy levels. (5%)
#449071
相關試卷
110年 - 110 國立臺灣科技大學_碩士班招生試題_材料科學與工程系(丙組)：材料導論#105562
110年 · #105562
110年 - 110 高雄科技大學_碩士班招生考試_化學工程與材料工程系：材料導論(丙組)#104401
110年 · #104401
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