二、對於下圖放大器電路,其中所使用 BJT 電晶體的特性為 β = 100、VT = 25 mV 和 VBE(ON) = 0.7 V以及VCC = 5 V、IEE = 0.5 mA、Rsig = 50 Ω、RC = 12 kΩ和RL = 12 kΩ。
⑵計算整體電壓增益 。(10 分)
2. Copper is deposited on an n-type Si substrate to form an ideal Schottky diode. = 4.65 eV, the electron affinity is 4.01 eV, cm3. Calculate the barrier height, the built-in potential, the depletion-layer width, and the maximum field at zero bias. T = 300K. Effective density of states in conduction band is 2.86 X .