2.For the following 3 N-type silicon samples, find the position of Fermi level Ef with respect to the intrinsic Fermi
level E, at room temperature (i.e. Ef- Ei) assuming full ionization for all 3 cascs. Check whether the above
assumption of full ionization of each case is correct with the calculated Fermi level. Assume the donor level is 0.05
eV below Ec and the energy bandgap Eg = 1.1 eV. At room temperature, use 2.3kT/q = 60 mV and the intrinsic
carrier concentration.
(b) .(5%)