申論題

Problem7(15 points) A transistor, which may be approximated as a hemispherical heat source of radius ro = 0.1 mm, is embedded in a large silicon substrate (k = 125 W/m• K) and dissipates heat at a rate g. All boundaries of silicon are maintained at an ambient temperature of T∞ = 27℃, except for the top surface, which is well insulated.