4. What is the depletion-layer width for a p-n junction with zero bias in germanium, given that the
impurity concentrations are
, respectively, at T = 300 K, relative
permittivity εr = 16 and contact potential difference Vo = 0.8 V?
(A) 0.0725 μm
(B) 0.145 μm
(C) 0.29 μm
(D) 0.58 μm
(E) 1.16 μm
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統計: 尚無統計資料
統計: 尚無統計資料