試題詳解

4. What is the depletion-layer width for a p-n junction with zero bias in germanium, given that the impurity concentrations are, respectively, at T = 300 K, relative permittivity εr = 16 and contact potential difference Vo = 0.8 V?
(A) 0.0725 μm
(B) 0.145  μm
(C) 0.29 μm
(D) 0.58  μm
(E) 1.16  μm