4. (18%) A metal-semiconductor contact is formed on Si (electron affinity X = 4.05 eV) with aluminum (work function Φm = 4.1 eV). The doping concentration of Si is
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(c) (6%) Please explain the electron flowing direction (e.g. from metal to Si) upon forming the M-S junction with interface conditions provided from both question (a) and (b).
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