8. Predict the product when cyclohexanone reacts with aqueous sodium hydroxide at 100°C.
(A)
(B)
(C)
(D)
(E)

9. Give the major product for the reaction below. (A) (B) (C)(D) (E)

10. Provide the structure of reactant (X) for the following reaction. (A) (B) (C) (D) (E)

11. Predict the major product for the following reaction. (A)(B)(C) (D) (E)

12. Chloroquine is used as an antimalarial drug. Rank the three nitrogen atoms in decreasing (strongest to weakest) order of basicity. (A) III ＞ I ＞ II (B) I ＞ III ＞ II (C) II ＞ I ＞ III (D) II ＞ III ＞ I (E) III ＞ II ＞ I

13. Predict the product for the following reaction. (A) (B) (C) (D) (E)

14. Which of the following reaction shown below give the WRONG product? (A) (B) (C)(D) (E)

15. Choose the     correct      statement below: (A) μ3-CO has higher IR stretching frequency (ν) than terminal CO does. (B) The Ru-C distance of Ru(CE)x complexes (E=O,S,Se,Te) is the shortest when E=oxygen. (C)Linear ν(N-O) in neutral molecules is usually lower than bent ν(N-O). (D) Ni(CO)3(PCl3) has higher CO stretching frequency than Ni(CO)3(PPh3) (E) π-back bonding from CO will increase the ν(CO) in metal carbonyl complexes

16. Which of the following specifies the      incorrect      magnetic moments for the complex? (A) 4.9 BM for [Cr(H2O)6]2+ (B) 2.8 BM for [Cr(CN)6]4- (C)5.9 BM for [Fe(CN)6]3- (D) 2.8 BM for [Ni(H2O)6]2+ (E) 1.7 BM for [Cu(en)2(H2O)2]2+

17. Three separate solutions of [M(H2O)6]2+ complexes (M= Fe, Ni, and Cu) were mislabeled. In order to identify them, UV-Vis spectra were taken. Solution A has three ligand field bands. Solution B and C have only one band. Upon addition of excess CN-, the single band of Solution B shifts to higher energy while that of Solution C becomes multiband. Which of the following is correct? (A) M=Fe for Solution C (B) M=Ni for Solution B (C)M=Cu for Solution A (D) M=Cu for Solution C (E) M=Ni for Solution A

18. Choose the      correct      statement below: (A) Pure silicon is an insulator at room temperature (B) Metal has fully filled conduction band (C)Adding phosphorus in silicon makes an n-type semiconductor (D) Germanium is a p-type dopant for silicon semiconductor (E) Adding n-type dopant lowers the Fermi level

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