申論題

3. An abrupt p-n junction with donor concentration = N_D and acceptor concentration = N_A. The diode is very long so you can assume the ends are at x = positive and negative infinity. The diode is forward biased.

(a) Given that the excess electron concentration in the p-side during forward bias V_F is:
Δn(x) = n_po[exp(V_F/V_T) – 1] exp[(x_p-x)/L_n]
Derive an expression for the electron current in the p quasi-neutral region in terms of the appropriate parameters including the doping concentration.