題組內容

4. (18%) A metal-semiconductor contact is formed on Si (electron affinity X = 4.05 eV) with aluminum (work function Φm = 4.1 eV). The doping concentration of Si is 61de77e53bbd0.jpg

(b) (6%) If a high density of surface states pin the Fermi level at 0.4 eV above the valence band maximum in this M-S junction interface. Please sketch its band diagram.