4. (18%) A metal-semiconductor contact is formed on Si (electron affinity X = 4.05 eV) with aluminum (work function Φm = 4.1 eV). The doping concentration of Si is
申論題內容
(b) (6%) If a high density of surface states pin the Fermi level at 0.4 eV above the valence band maximum in this M-S
junction interface. Please sketch its band diagram.
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