申論題

2. Consider the following symmetrically doped semiconductor-oxide-semiconductor structure in Fig. 2.
The thickness of the oxide is 100 Å. The depletion regions are shown in the figure. Assuming V = 0 at 300 K. N_A = N_D = 5×10¹⁶ cm^-³. Dielectric constants of Si and SiO₂ are 11.9 and 3.9, respectively.

(c) Sketch the electrostatic potential in equilibrium from one metal contact to the other.
Label your sketch. Indicate important potential values.