2.(25%) Consider the voltage amplifier of Figure 2 with a BJT device having β =100 when it is biased in the active region, the AC signal voltage Vsig, signal resistance 
= 10kΩ and coupling capacitors 
and
which can block DC component and pass AC component. The voltage supplies 
= 10V and the thermal voltage VT= 25mV. The constant voltage drop 0.7V approximation can be used for the turn- on of a p-n junction, and the constant voltage drop 
~ 0.2V approximation can be used when the BJT is biased in the saturation region. In addition, other resistances are also included, such like R1 = 2MΩ, R2 = 2MΩ, RE = 5kΩ, Rc = 5kΩ, RL= 5kΩ. Please come out following parameters: (a) transconductance gm, (b) input resistance
, (c) overall AC voltage gain 
(d) Please describe the advantages of the existing of emitter resistance Re compared with no RE. (5%, 5%, 5%, 10%)
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T , please find the high frequency close loop gain of Vo/VI at f= 1 GHz. (5%, 5%, 5%)
= 0.5V, 
= 200 uA/V2. All PMOSFETs have the same WIL = 40um/0.5pμm, 
= -0.5V, 
= 50 μA/V2. IVAI (for all devices)
= 100μ.A. Neglect the effect of VA on bias current. Please find (a) the transconductance gm and ro of Q2, (b) the voltage gain of the furst stage A1 and the second stage A2, (c) the input common-mode range, and (d) the output voltage range.(10%, 10%, 5%, 5%)
= RL = 5 kΩ, I1 = I2 = 1mA, and identical transistors with β = 100, fT = 500 MHz, Cμ = 5pF, and Cc = 2uF. The thermal voltage VT= 25mV. For simplicity, neglect ro and rx effect. Please find (a) the input resistance
(b) the midband gain AM, (c) the Cπof the BJTs, and (d) 3-dB frequency of the upper end of the midband, fH (using open-circuit time- constants method). (5%, 5%, 5%, 15%)