25. 某 FET 工作在飽和區，其 iD-VGS 關係如圖所示，iD是流入汲極之電流，則此 FET 為何? (A) 增強型 NMOS (B) 增強型 PMOS (C) 空乏型 NMOS (D) 空乏型 PMOS

5. Which of the following statements is true with respect to Belady's anomaly? (A) Giving more memory to a process will improve its performance. (B) As the number of allocated frames increases, the page-fault rate may decrease for all page replacement algorithms. (C) For some page replacement algorithms, the page-fault rate may increase as the number of allocated frames increases. (D) For some page replacement algorithms, the page-fault rate may decrease as the number of allocated frames increases.

25. 某 FET 工作在飽和區，其 iD-VGS 關係如圖所示，iD是流入汲極之電流，則此 FET 為何?

(A) 增強型 NMOS
(B) 增強型 PMOS
(C) 空乏型 NMOS
(D) 空乏型 PMOS

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