題組內容

4. (18%) A metal-semiconductor contact is formed on Si (electron affinity X = 4.05 eV) with aluminum (work function Φ_m = 4.1 eV). The doping concentration of Si is

(a) (6%) Please plot the ideal band diagram of the Al-5i M-S junction and mark the Fermi level E_F, the Schottky barrier height , and built-in potential barrier at equilibrium.

題組內容

(a) (6%) Please plot the ideal band diagram of the Al-5i M-S junction and mark the Fermi level EF, the Schottky barrier height , and built-in potential barrier at equilibrium.

其他申論題

(a) (6%) Please plot the ideal band diagram of the Al-5i M-S junction and mark the Fermi level E_F, the Schottky barrier height , and built-in potential barrier at equilibrium.