題組內容

3. (10%) Group-Vatoms (e.g. P, As, or Sb) have been doped in Si with an activation energy ED = 100 meV below the conduction band energy level Ec.The Fermi level (EF) is measured at an energy of 0.15 eV below Ec at room temperature. Assuming 61de776b04e24.jpg, degeneracy of the ionized impurity is two, please calculate

(b) (4%) density of the implanted dopants ND